Deji Akinwande
The University of Texas at Austin
Abstract: This presentation focuses on the discovery of memory effect in 2D atomically-thin nanomaterials towards greater scientific understanding and advanced engineering applications. Non-volatile memory devices based on 2D materials are an application of defects and is a rapidly advancing field with rich physics that can be attributed to vacancies combined with metal adsorption. In particular the talk will highlight our pioneering work on monolayer memory (atomristors) that has expanded to over a dozen 2D sheets and can enable various applications including zero-power devices, non-volatile RF switches, and memristors for neuromorphic computing. In addition, recent work on covid-19 biosensors will be presented towards exploiting quantum effects for improved sensitivity. Much of these research have been published in nature, advanced materials, and ACS journals.
References:
[1] M. Kim, G. Ducournau, S. Skrzypczak, S. J. Yang, P. Szriftgiser, N. Wainstein, K. Stern, H. Happy, E. Yalon, E. Pallecchi, and D. Akinwande, “Monolayer molybdenum disulfide switches for 6G communication systems,” Nature Electronics, 2022.
[2] R. Ge, X. Wu, L. Liang, …, J. C. Lee, and D. Akinwande, “A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon,” Advanced Materials, vol. 33, 2021.
[3] S. M. Hus, R. Ge, P.-A. Chen, L. Liang, G. E. Donnelly, W. Ko, F. Huang, M.-H. Chiang, A.-P. Li, and D. Akinwande, “Observation of single-defect memristor in an MoS2 atomic sheet,” Nature Nanotechnology, 11/2020.
[4] S. Chen, M. R. Mahmoodi, … D. Akinwande, D. B. Strukov, and M. Lanza, “Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks,” Nature Electronics, 10/2020.
[5] D. Akinwande, C. Huyghebaert, C.-H. Wang, Serna, S. Goossens, L. Li, H. S. P. Wong, and F. Koppens, “Graphene and 2D Materials for Silicon Technology,” Nature, 2019.